Calculate oxide loss as a function of overetch time

Reference no: EM131403958

Molybdenum etching in Cl₂/O₂ plasmas results in oxychlorides such as MoOCl₄. The etch rate is 300 nm/min, molybdenum film thickness is 300 nm and film non-uniformity and etch process nonuniformity across the wafer are both 5%. The selectivity of Mo:oxide is 20:1. Calculate oxide loss as a function of overetch time.

Reference no: EM131403958

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