Calculate built-in potential and width of depletion region

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A Schottky diode is formed between a metal of work function eφm=4.7eV, and a semiconductor of electron affinity eφB=4.0eV. The semiconductor is n-type with Nd=1016 cm-3, Nc=1019 cm-3 and εR =12. Asuming thermal equilibrium and complete ionization at 300K, calculate built-in potential and width of the depletion region.

Reference no: EM13280167

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