Calculate both doping densities in silicon junction

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Reference no: EM13247094

A silicon (ni= 10^10 cm^-3) p-n junction diode has a maximum electric field of -10^6 V/cm and a depletion layer width of 1 um. The acceptor density in the p-type region is four times larger than the donor density in the n-type region. Calculate both doping densities

Reference no: EM13247094

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