Briefly explain how defects occur in an integrated circuit

Reference no: EM132903690

Question 1

I. Name two contributors of sub-threshold current of a MOSFET.

II. State the reason why a narrow width MOSFET has a higher threshold voltage as compared with a non-narrow width MOSFET.

III. State the two main applications of SiGe Heterojunction Bipolar Transistors (HBT) and explain briefly why they are commonly used in BiCMOS integrated circuits.

IV. The figure below shows a cross section of a short-channel MOS transistor. Given that L = 0.4μm, L' = 0.3μm, C_ox = 80nF/cm2, NA = 2.0x1016cm^-3, and x_dep = 0.23μm, calculate the change in threshold voltage due to short channel effect.

Question 2

I. List down the components that determine the cost of an integrated circuit and briefly explain each of them.

II. A wafer has 8 inch diameter. Area of die is 2.0cm²and is fabricated with 1 defects/cm², and α = 3.

a. Determine the die per wafer and die yield of this wafer.

b. If the cost of each wafer is RM5000, calculate the cost of each die.

III. Briefly explain how defects occur in an integrated circuit.

Question 3

Explain with the aid of diagrams and equations, how velocity saturation, which is one of the problems caused by short channel effect affect the performance of a submicron channel device.

Question 4

What are the important issues to consider when designing a submicron channel MOSFET?

Reference no: EM132903690

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