At what temperature are there essentially no charge carriers

Reference no: EM13983853

In heavily doped n-type silicon, there are 10¹⁶ electrons per cm³ at room temperature. The donor level is located 0.05 eV below the conduction band. The current carrier concentration as a function of temperature may be expressed as n = n0 e^-Eg/2KbT. At what temperature are there essentially no charge carriers (< 1 cm^-3 )?

Reference no: EM13983853

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