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In the lucky drift model for impact ionization, it is assumed that some lucky carriers are accelerated ballistically (i.e. without scattering) to energies above threshold, causing impact ionization. Assume that average relaxation time is 0.05 ps. At approximately what electric fields will 0.1% of the electrons acquire threshold energy in GaAs and in Si? Assume that at high energies the electron mass is the free electron mass.
A six pole, 400 V d.c. motor draws 110 A from the supply. The shunt field resistance is 200 Ohm and the armature resistance is 0.5 Ohm. The armature is wave wound with 600 conductors operates at a speed of 1200 rev/min when supplying full load.
Use a 5nF capacitor to design a series RLC bandpass filter in series. the center frequency of the filter is 8kHz, and the quality factor is 2. perform the analysis in Pspice and graph the transfer function on the y axis vs.
What is the (approximate) maximum electric field intensity for which constant mobility may be assumed for electrons in silicon. In a digital circuit with a supply voltage of 1V, what is the corresponding gate length for MOS transistors.
Design a 3rd order Butterworth High-Pass filter with a Fc of 2kHz and a passband gain of 2. Find the gain and critical frequencies of each individual stage. Plot the gain portion of the bode plot.
In a satellite receiver operating at 12.0 GHz there is need for a reactive impedance having reactance of X = - 67 Ohm. Using an open circuit stub formed from 50 Ohm lossless transmission line having a phase velocity of 1 x 10^8 m/s
Assume a receiver is located 10 km from a 50 W transmitter. The carrier frequency is 6 GHz and free space propagation is assumed. Assume the unit gains for the system gains. Find: a) The power at the receiver
A PWM is used in 8-bit mode to produce a signal with a 1 msec period and 60% duty cycle. Determine the value required for any pre-scaling, and the values for the period, and duty cycle registers. The E-clock is 24 MHz.
Suppose a certain causal signal f(t) has a Laplace transform F(s) = 1. If f(t) is sampled at times kT where T is a constant time interval and integer k>=0, what are the sample values
In a ternary number system there arethree digits : 0, 1, and 2. The figure shown below defines aternary half-adder. Design a circuit that implements thishalf-adder using binary-encoded signals, such that two bits areused for each ternary digit.
A batch process which involves filling a tank with liquid, mixing the liquid and draining the tank, is automated with a PLC. The specific sequence of events is as follows
(a) the conductivity in a p type silicon semiconductor at T=300 K is sigma=0.25 (ohm-cm)^-1. Determine the thermal equilibrium values of electron and hole concentrations. (b) Repeat part (a) for n type GaAs semiconductor if the resistivity is rho=..
For a device with a failure probability of 0.02 when subjected to a specific test environment, use the binomial distribution to calculate the probabilities that a test sample of 25 devices will contain (a) no failures; (b) one failure; (c) more th..
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