Asperities of the interface region

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Reference no: EM13880269

A tool used for fabricating semiconductor devices consists of a chuck (thick metallic, cylindrical disk) onto which a very thin silicon wafer (p = 2700 kg/m3 · c = 875 J/kg · K, k = 177 W/m · K) is placed by a robotic arm. Once in position, an electric field in the chuck is energized, creating an electrostatic force that holds the wafer firmly to the chuck. To ensure a reproducible thermal contact resistance between the chuck and the wafer from cycle-to-cycle pressurized helium gas is introduced at the center of the chuck and flows (very slowly) radially outward between the asperities of the interface region.

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An experiment has been performed under conditions for which the wafer, initially at a uniform temperature Tw,i = 100°C, is suddenly placed on the chuck, which is at a uniform and constant temperature Tc = 23°C. With the wafer in place, the electrostatic force and the helium gas flow are applied. After 15 seconds, the temperature of the wafer is determined to be 33°C. What is the thermal contact resistance Rt,c (m2 · K/W) between the wafer and chuck? Will the value of Rt,c increase, decrease, or remain the same if air, instead of helium, is used as the purge gas?

Reference no: EM13880269

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