An intrinsic semiconductor si is doped with a p-type

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An intrinsic semiconductor (Si) is doped with a p-type impurity. The minority carrier population in that material at room temperature is measured to be 11250 per cm^3. Given that, at room temperature, the hole mobility in Si as 350 cm^2/Vsec and ni= pi = 1.5 × 10^10 per cm^3, determine the electrical resistivity of the doped semiconducto?

Reference no: EM13344624

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