A uniformly doped silicon pn junction

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Reference no: EM13870332

A uniformly doped silicon pn junction at T = 300 K, with Na = 10¹⁸ cm^-3, is to be designed such that at a reverse-bias voltage of 10 V, the maximum electric field is limited to ε_max =10⁵ V/cm. Determine the maximum doping concentration in the n-region.

Reference no: EM13870332

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