A surface recombination velocity of sg.

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Reference no: EM13862779

Consider a region of p-type semiconductor with length L << the minority carrier diffusion length. At x=0, an excess minority carrier density of Änp0 is injected. A contact at x=L can extract excess minority carriers reaching this point, with a surface recombination velocity of sg.

a) Find an expression for Änp (x). Your solution should clearly show each major step.

b) Find an expression for the diffusion current density at x=0, Jn(0).

Reference no: EM13862779

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