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A non-sinusoidal voltage has a Fourier Series : V(t) = 10 + 30 Cos(2π60t+300) + 20 Cos(4π60t-600) + 25Cos(2π60t-200)+10 Cos(4π60t-300) This voltage is connected to a load which is 10? resistor and 20mH inductor connected in series. Find: i) The RMS voltage ii) The average voltage across the inductor iii) Find the current i(t) iv) Find the real power in second harmonic v) The total real power absorbed by the load
A Si wafer is doped with Na = 5x10^16 /cm^3 of acceptors. In equilibrium at T=330K calculate, list the following for the Si wafer: Eg (Energy gap), ni (intrinsic concentration), n,p - the free electron and hole concentrations
A transmitter operates with a carrier frequency of 2.0 MHz. It is amplitude modulated by two tones with frequencies of 1300 and 2300Hz. What frequencies are present in the output signal
determine the frequency response for the LTI system specified by the LCCDE y[n] - 0.8y[n -1] = x[n]. Plot the magnitude response and phase response for -pie
A new government law requires that the lead content of drinking water be less than 1.0 ppb. You are a safety engineer, and you have recently tested your companys drinking water using two methods. Method A gives a reading of 0.85 ppb
The resistance per 304.8 m of copper wire uses in the extension cord of AWG 14,12,10,8 and 6 are 2.58,1.62, 1.02, 0.64 and 0.41 respectively. Assume a 2% allowable voltage drop. Show all working .
Use contraction beginning with a 4-bit adder with carry out to design a 4-bit increment-by-2 circuit with carry out that adds the binary value of 0010 to its 4-bit input. The function to be implemented is S=A+0010.
A zero mean gaussian random vector X=(X1, X2)T has a covariance matrix given by K=[ 3 -1 -1 3 ] Find a transformation matrix A so that the vector Y=AX is a gaussian random vector with uncorrelated (and therefore independent) components of unity va..
A certain internally compensated (dominant pole) op amp has a dc gain of 200,000 and 3 dB bandwidth of 5 Hz. Sketch the Bode plot of the magnitude of the open loop gain to scale.
explain the difference betweem poly to poly capacitors, pn junction capacitors and MOS capacitors in CMOS analog design
To discharge a capacitor of 1mF charged with a voltage of 1 volt we connect it, at time t=0, with a resistor of R-ohm. When we measure the voltage in the resistor we find it to be v_R (t)=e^(-t) u(t). Determine the resistance R.
Suppose you have a silicon wafer containing a p++n junction. Design the doping level on the n-side so that the reverse break down voltage is 45 V.
A ripple voltage of 0.4Vpp is required. Diodes are assumed to have 0.7V drop. Determine the 60Hz transformer secondary voltage and the size capacitor required. What would be the PIV for the diodes
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