A junction transistor is created by sandwiching a thin layer of P-type semiconductor between two N-type semiconductors or by sandwiching a thin layer of n-type semiconductor between two P-type semiconductors.
E - Emitter (emits majority charge carriers)
C - Collects majority charge carriers
B - Base (provide proper interaction between E and C)
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Working of Transistor: In transistor collector - base junction is forward biased and emitter - base junction is reverse biased.
NPN - transistor
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PNP - transistor
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5% emitter electron combine with the holes in the base region resulting in small base current. Remaining 95% electrons enter the collector region.
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5% emitter holes combine with the electrons in the base region resulting in small base current. Remaining 95% holes enter the collector region.
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Ie > Ic , and Ic = Ib + Ic
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Ie > Ic , and Ic = Ib + Ic
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Transistor as an amplifier: A device which increases the amplitude of the input signal is called amplifier.
The transistor may be used as an amplifier in the following three configurations
(i) CB amplifier (ii) CE amplifier (iii) CC amplifier
Parameters of CE/CB amplifiers:
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