Biasing the Field Effect Transistor
Transductance:
The transductance of a FET can be defined as
As the changes in ID and VGS are equivalent to AC current and voltage. This equation can be written as follows
The unit of gm is mho.
The value of gm is 2000 m A / V.
Fig.1
The value of gm can be obtained from transductance curve as shown in the figure1.
If A and B points are considered, than the change in VGS produces a change in ID. The ratio of ID and VGS is value of gm in between A and B points. If points C and D are considered, then the same change in the value of VGS produces more change in ID. Thus, gm value is higher. The gm tells us how much control gate voltage has over the drain current. Higher the value of gm, more effective is the gate voltage in controlling gate current. The second parameter rd is drain resistance.
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