Temperature Effects:

Temperature plays a significant role in determining the characteristic of diodes. As the temperature increases, the turn on voltage, v_ON, decreases. On the other hand a decrease in temperature results in an increase in v_ON. This is illustrated in figure 2, here V_ON varies linearly with the temperature which is evidenced by the evenly spaced curves for increasing temperature in 25 °C increments.

The temperature relationship is described by equation as follows

V_ON(T_New ) - V_ON(T_room) = k_T(T_New - T _room)           (E-10)

Figure - Dependence of iD on temperature versus vD for real diode (kT = -2.0 mV /°C)

here,

T_room= room temperature

T_New= new temperature of diode in °C.

V_ON(T_room) = diode voltage at the room   temperature.
V_ON (T_New) = diode voltage at the new temperature.

k_T = temperature coefficient in V/°C.

Although k_T varies with the changing operating parameters, standard engineering practice allows approximation as a constant. Values of k_T for various types of diodes at the room temperature are given as follows:

k_T= -2.5 mV/°C for germanium diodes k_T = -2.0 mV/°C for silicon diodes

The reverse saturation current, I_O depends also on temperature. At the room temperature, it increases nearly 16% per °C for silicon and 10% per °C for germanium diodes. Or we can say that IO approximately doubles for every 5 °C increase in the temperature for silicon, and for every 7 °C for germanium. The expression for reverse saturation current as the function of temperature can be approximated as follows

      (E-11)

here K_i= 0.15/°C ( for silicon) and T₁ and T₂ are the 2 arbitrary temperatures.

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