Semiconductor

• Conductivity between of metals and insulators.
• Conductivity can be varied over orders of magnitude by the changes in optical excitation, temperature, and impurity content (doping).
• In general it is found in column IV and neighboring columns of periodic table.
• Elemental semiconductors are Si, Ge.
• Compound semiconductors are

Binary : GaAs, AlAs, GaP, etc. (III-V). ZnS, ZnTe, CdSe (II- VI). SiC, SiGe (IV).

• Ternary : GaAsP.

Quaternary: In GaAsP.

• Si is extensively used for transistors, rectifiers, and ICs.
• III-V compounds extensively used in optoelectronic and the high speed applications.

Applications

• The ICs SSI, LSI, MSI, and VLSI.
• The fluorescent materials which are used in TV screens II-VI (ZnS).
• The light detectors CdSe, PbTe, InSb, HgCdTe.
• The infrared and nuclear radiation detectors Si and Ge.
• Gunn diode InP, GaAs,.
• Semiconductor LEDs GaAs, GaP.
• Semiconductor LASERs, AlGaAs, GaAs.

Energy Gap

• Distinguishing feature among metals, insulators, and semiconductors.
• Determines the absorption/emission spectra, the leakage current, and the intrinsic conductivity.
• Unique value for each semiconductor (for example 1.12 eV for Si, 1.42 eV for GaAs) functions of temperature.

Impurities

• The impurities can be added in precisely controlled amounts.
• The impurities can change the electronic and optical properties.
• Are used to vary conductivity over broad ranges.
• The impurities can even change conduction process from the conduction by negative charge carriers to positive charge carriers and vice versa of this.
• The Controlled addition of impurities doping.

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