Relation between different currents in a transistor:

The total current flowing into transistor should be equal to the total current flowing out of it. Hence, the emitter current I_E is equal to the sum of the collector (I_C ) and base current (I_B). That is,

I_E = I_C + I_B

The currents directions are positive directions. The total collector current I_C  is made up of the two components.

1. The fraction of emitter current which reaches the collector (α_dc I_E)

2. The normal reverse leakage current I_CO

α_dc is the large signal current gain or dc alpha. It is always positive in nature. Since collector current is almost equal to the I_E  therefore α_dc I_E  varies from 0.9 to 0.98. Usually, the reverse leakage current is quite small as compared to the total collector current.

NOTE: The forward bias on the emitter diode controls the number of free electrons infected into the base. The larger (VBE) forward voltage, the greater the number of injected electrons. The reverse bias on the collector diode has little influence on the number of electrons that enter the collector. Increasing VCB does not change the number of free electrons arriving at the collector junction layer.

The symbol of NPN and PNP transistors are shown in the figure.

                             Figure

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