Large-signal models
Ebers-Moll model
![499_Ebers moll model.png](https://www.expertsmind.com/../CMSImages/499_Ebers moll model.png)
Ebers-Moll Model for an NPN transistor
- IB, IC, IE: collector, base, and emitter currents
- ICD, IED: collector and emitter diode currents
- αF, αR: forward and reverse common base current gains
![2292_Ebers moll model1.png](https://www.expertsmind.com/../CMSImages/2292_Ebers moll model1.png)
Ebers Moll Model for a PNP transistor
The DC emitter and collector currents in active mode are well modeled by an approximation to the Ebers Moll model:
![573_Ebers moll model2.png](https://www.expertsmind.com/../CMSImages/573_Ebers moll model2.png)
The base internal current is mainly by diffusion and
![1071_Ebers moll model3.png](https://www.expertsmind.com/../CMSImages/1071_Ebers moll model3.png)
here
- VT is thermal voltage kT / q (approximately 26 mV at 300 K ≈ room temperature).
- IE is emitter current
- IC is collector current
- αT is common base forward short circuit current gain (0.98 to 0.998)
- IES is reverse saturation current of the base-emitter diode (on the order of 10-15 to 10-12 amperes)
- VBE is base-emitter voltage
- Dn is diffusion constant for electrons in the p-type base
- W is base width
The unapproximated Ebers-Moll equations used to describe the three currents in any operating region are given below. These equations are based on the transport model for a bipolar junction transistor.
![1204_Ebers moll model4.png](https://www.expertsmind.com/../CMSImages/1204_Ebers moll model4.png)
where
- iC is the collector current
- iB is the base current
- iE is the emitter current
- βF is the forward common emitter current gain (20 to 500)
- βR is the reverse common emitter current gain (0 to 20)
- IS is the reverse saturation current (on the order of 10-15 to 10-12 amperes)
- VT is the thermal voltage(approximately 26 mV at 300 K ≈ room temperature).
- VBE is the base-emitter voltage
- VBC is the base-collector voltage
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