Large Signal Current Gain βdc :-

The ratio I_c / I_B can be defined as transfer ratio or large signal current gain b_dc

Here I_C is collector current and I_B is base current. The bdc is an indication of how well the transistor works. The value of b_dc varies from 50 to 300.

In the terms of h parameters, b dc  is called as dc current gain and in designated hfE  ( b _dc  = h_fE). Knowing maximum collector current and bdc minimum base current can be found which will be required to saturate transistor.

This expression of bdc can be defined neglecting reverse leakage current (I_CO).

Taking the reverse leakage current (I_CO) into account, expression for the bdc can be obtained as stated below:

b_dc in terms of the a_dc can be given by

As, I_CO = I_CBO

The cut off of a transistor means I_E  = 0, then I_C= I_CBO  and I_B  = - I_CBO. Consequently, the above expression b_dc gives collector current increment to base current change form cut off to I_B and hence it represents large signal current gain of all the common emitter transistor.

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