Large Signal Current Gain βdc :-
The ratio Ic / IB can be defined as transfer ratio or large signal current gain bdc
![907_large signal current gain.png](https://www.expertsmind.com/../CMSImages/907_large signal current gain.png)
Here IC is collector current and IB is base current. The bdc is an indication of how well the transistor works. The value of bdc varies from 50 to 300.
In the terms of h parameters, b dc is called as dc current gain and in designated hfE ( b dc = hfE). Knowing maximum collector current and bdc minimum base current can be found which will be required to saturate transistor.
![1816_large signal current gain1.png](https://www.expertsmind.com/../CMSImages/1816_large signal current gain1.png)
This expression of bdc can be defined neglecting reverse leakage current (ICO).
Taking the reverse leakage current (ICO) into account, expression for the bdc can be obtained as stated below:
bdc in terms of the adc can be given by
![349_large signal current gain2.png](https://www.expertsmind.com/../CMSImages/349_large signal current gain2.png)
As, ICO = ICBO
![1647_large signal current gain3.png](https://www.expertsmind.com/CMSImages/1647_large%20signal%20current%20gain3.png)
The cut off of a transistor means IE = 0, then IC= ICBO and IB = - ICBO. Consequently, the above expression bdc gives collector current increment to base current change form cut off to IB and hence it represents large signal current gain of all the common emitter transistor.
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