History
The bipolar point-contact transistor was invented in December in the year 1947 by John Bardeen and Walter Brattain at the Bell Telephone Laboratories under direction of William Shockley. The junction version called as the bipolar junction transistor, invented by Shockley in the year 1948, enjoyed three decades as the device of choice in design of discrete and integrated circuits. These days, the use of BJT has declined in favor of CMOS technology in design of digital integrated circuits.
Germanium transistors
The germanium transistor was more common in the years 1950s and 1960s, and while it exhibits a lower "cut off" voltage, characteristically about 0.2 V, making it more appropriate for some applications, it also posses a greater tendency to exhibit the thermal runaway.
Early manufacturing techniques
Various methods of manufacturing the bipolar junction transistors were developed.
- Point-contact transistor - The first type to demonstrate transistor action, limited commercial use because of high cost and noise.
- Grown junction transistor - first type of bipolar junction transistor made. Invented byWilliam Shockley at Bell Labs. Invented on June 23, in the year 1948. Patent filed on June 26,1948.
- Alloy junction transistor - emitter and collector alloy beads fused to base. Developed atThe General Electric and RCA in the year 1951.
o Micro alloy transistor - The high speed type of alloy junction transistor. Developed at Philco.
o Micro alloy diffused transistor - The high speed type of alloy junction transistor. Developed at the Philco.o Post alloy diffused transistor - high speed type of alloy junction transistor.Developed at Philips.
- Tetrode transistor - The high speed variant of grown junction transistor or alloy junctiontransistor with 2 connections to base.? Surface barrier transistor - high speed metal barrier junction transistor. Developed atPhilco in the year 1953.
- Drift-field transistor - high speed bipolar junction transistor. Invented by Herbert Kroeme at Central Bureau of Telecommunications Technology of the German Postal Service, in the year 1953.
- Diffusion transistor - modern type bipolar junction transistor. Prototypes developed atBell Labs in the year 1954.
o The diffused base transistor - first implementation of diffusion transistor.
o Mesa transistor - Developed at the Texas Instruments in the year 1957.
o Planar transistor - the bipolar junction transistor which made mass produced monolithic integrated circuits possible. Developed by Dr. Jean Hoerni at Fairchild in the year 1959.
- Epitaxial transistor - The bipolar junction transistor made using vapor phase deposition.
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