Effects of Temperature and Doping on Mobility

• The two major scattering events which influence electron and hole motion ( mobility) are the lattice scattering and the impurity scattering.
• All lattice atoms vibrate due to temperature and can scatter carriers due to collisions.
• These vibrations in collection are called phonons, thus lattice scattering is also called as phonon scattering.
• With increasing temperature, lattice vibrations increase, and the mean free time between collisions decreases mobility decreases (dependence  ).
• Scattering from the crystal defects and ionized impurities dominate at the low temperatures.
• Since carriers moving with the low velocity (at low temperature) can get scattered much easily by ionized impurities, this kind of scattering creates a decrease in carrier mobility with the decreasing temperature (typical dependence ).
• Note: the scattering probability is inversely proportional to the mean free time (and to mobility), thus, the mobilities because of two or more scattering events add inversely:   (2.28)
• Therefore, mechanism causing the lowest mobility value dominates.
• Mobility also decreases with the increasing doping, as the ionized impurities scatter carriers more (for example μ_n for intrinsic Si is 1350 cm²/V-sec at 300 K, whereas with the donor doping of 10¹⁷cm³, n drops to 700   cm²/V-sec).

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