Introduction to depletion layer pn junction:
If the one side of crystal pure semiconductor Si(silicon) or Ge(Germanium) is doped with the acceptor impurity atoms and other side is doped with donor impurity atoms , a PN junction is formed as shown in figure. P region has high concentration of holes and N region contains large the number of electrons.
What is Depletion Layer of PN Junction?
When the junction is formed, free electrons and holes cross through junction by the process of diffusion. Throughout this process, the electrons crossing junction from N- region into P-region , recombine with the holes in P-region very close to junction. Likewise holes crossing the junction from P-region into N-region, recombine with the electrons in N- region very close to junction. Thus the region is formed, which does not contain any mobile charge very close to the junction. This region is called as depletion layer of PN junction.
In this region, on left side of the junction, the acceptor atoms become negative ions and on the right side of the junction, the donor atoms become positive ions as shown in figure.
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