Biasing the Field Effect Transistor
Current Source Bias:
This is another method to produce solid Q point. The aim is to produce the drain current which is independent of VGS. Voltage divider bias and self bias attempt to do this by swamping out of variations in VGS.
Using two power supplies:
The current source bias is used to make ID constant which is shown in the figure 1.
Figure 1
Bipolar transistor is emitter biased; its collector current can be given by
IC = (VEE - VBE ) / RE.
Because the bipolar transistor behaves like a current source, it forces drain current to equal the bipolar collector current.
ID = IC
As IC is constant, both the Q points have the same value of drain current. The current source quite effectively wipes out the influence of VGS. However, VGS is different for each Q point, it no longer influences value of the drain current.
Using One power supply:
When the positive supply is available only, the circuit shown in the figure 2, can be taken in use to set up a constant drain current.
In this case, bipolar transistor is voltage divider biased. By assuming a stiff voltage divider, emitter and collector currents are constant for all the bipolar transistors. This force the FET drain current equal the bipolar collector current.
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