Common Emitter Curves:

The common emitter configuration of BJT is shown in the figure 1.

Figure 1

In Common emitter configuration the emitter is made common to input and output. It is also referred as grounded emitter configuration. This is most commonly used configuration. In this, the base current and output voltages are taken as impendent parameters and input voltage and output current as the dependent parameters

V_BE = f₁ ( I_B, V_CE ) I_C  = f₂( I_B, V_CE ) Input Characteristic:

The curve among I_B  and V_BE  for different values of V_CE  are shown in the figure 2. Since base emitter junction of the transistor is a diode, therefore characteristic is similar to diode one. With higher values of V_CE collector gathers a little more electrons and therefore the base current reduces. Normally this effect can be neglected. When the collector is shorted with emitter then the input characteristic is characteristic of a forward biased diode when VBE is zero and IB is also zero.

Fig. 2

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