Base-width modulation

Top: NPN base width for the low collector-base reverse bias; Bottom: narrower NPN base width for large collector-base reverses bias. Hashed regions are depleted regions.

As the applied collector-base voltage (V_CB = V_CE - V_BE) varies, the collector-base depletion region varies in size. The increase in collector-base voltage, for instance, causes a greater reverse bias across collector-base junction, increasing collector-base depletion region width, and decreasing width of base. This variation in base width often is called as "Early effect" after its discoverer  James M. Early.

Narrowing of base width has 2 consequences:

• There is a lesser chance for the recombination within "smaller" base region.
• The charge gradient is increased across base, and consequently, the current of minority carriers injected across emitter junction increases.

Both the factors increase collector or "output" current of transistor in response to an increase in collector-base voltage.

In forward-active region, the Early effect modifies collector current (i_C) and forward common emitter current gain (β_F) as given by

here:

• V_CB is collector base voltage
• V_A is Early voltage (15 V to 150 V)
• β_F0 is forward common emitter current gain when the value V_CB = 0 V
• r_o is output impedance
• I_C is collector current

Email based Electronics Devices and circuits assignment help - homework help at Expertsmind

Are you searching Electronics Engineering assignment help expert for help with Base-width modulation in Ebers Moll Model questions?  Base-width modulation in Ebers Moll Model topic is not easier to learn without any external help?  We at www.expertsmind.com offers free lecture notes for Electronics Devices and circuits assignment help and Electronics Devices and circuits homework help. Live tutors are available 24x7 hours for helping students in their Base-width modulation in Ebers Moll Model related problems. We provide step by step Base-width modulation in Ebers Moll Model question's answers with 100% plagiarism free content. We prepare quality content and notes for Base-width modulation in Ebers Moll Model topic under Electronics Devices and circuits theory and study material. These are avail for subscribed users and they can get advantages anytime.

Why Expertsmind for assignment help

1. Higher degree holder and experienced experts network
2. Punctuality and responsibility of work
3. Quality solution with 100% plagiarism free answers
4. Time on Delivery
5. Privacy of information and details
6. Excellence in solving electronics engineering questions in excels and word format.
7. Best tutoring assistance 24x7 hours