Base-width modulation
![2459_base width modulation.png](https://www.expertsmind.com/../CMSImages/2459_base width modulation.png)
Top: NPN base width for the low collector-base reverse bias; Bottom: narrower NPN base width for large collector-base reverses bias. Hashed regions are depleted regions.
As the applied collector-base voltage (VCB = VCE - VBE) varies, the collector-base depletion region varies in size. The increase in collector-base voltage, for instance, causes a greater reverse bias across collector-base junction, increasing collector-base depletion region width, and decreasing width of base. This variation in base width often is called as "Early effect" after its discoverer James M. Early.
Narrowing of base width has 2 consequences:
- There is a lesser chance for the recombination within "smaller" base region.
- The charge gradient is increased across base, and consequently, the current of minority carriers injected across emitter junction increases.
Both the factors increase collector or "output" current of transistor in response to an increase in collector-base voltage.
In forward-active region, the Early effect modifies collector current (iC) and forward common emitter current gain (βF) as given by
![984_base width modulation1.png](https://www.expertsmind.com/../CMSImages/984_base width modulation1.png)
![1169_base width modulation2.png](https://www.expertsmind.com/CMSImages/1169_base%20width%20modulation2.png)
here:
- VCB is collector base voltage
- VA is Early voltage (15 V to 150 V)
- βF0 is forward common emitter current gain when the value VCB = 0 V
- ro is output impedance
- IC is collector current
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