Applications
The BJT remains a device which excels in some applications, like discrete circuit design, because of the wide selection of BJT types available, and due to its high transconductance and output resistance compared to MOSFETs. The BJT is also choice for demanding analog circuits, particularly for high-frequency applications, like radio-frequency circuits for wireless systems. The bipolar transistors can be combined with the MOSFETs in an integrated circuit by using a BiCMOS process of wafer fabrication to create circuits which take advantage of the application strengths of both the types of transistor.
Temperature sensors
Due to the known temperature and current dependence of forward-biased base-emitter junction voltage, the BJT can be used to measure the temperature by subtracting 2 voltages at two different bias currents in a known ratio.
Logarithmic converters
As the base-emitter voltage varies as the log of the base emitter and collector emitter currents, a BJT can be used to compute logarithms also and anti-logarithms. A diode can perform these nonlinear functions also, but the transistor provides more circuit flexibility.
Vulnerabilities
Exposure of transistor to creates the radiation causes a buildup of 'defects' in base region that behaves as recombination centers. Resulting reduction in the minority carrier lifetime causes gradual loss of the gain of the transistor.
Power BJTs are subject to the failure mode called as secondary breakdown, in which the excessive current and normal imperfections in silicon die cause portions of silicon inside the device to become disproportionately hotter than others. The doped silicon has a negative temperature coefficient, means that it conducts more current at the higher temperatures. Thus, the hottest part of die conducts the most current, causing the conductivity of it to increase, which then causes it to become gradually hotter again, until device fails internally. The thermal runaway process associated with the secondary breakdown, once triggered, occurs instantly and can catastrophically damage the transistor package.
If emitter base junction is reverse biased into avalanche (zener) mode and current flows for a short period, the current gain of BJT will be degraded permanently.
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