Analysis of Semiconductor Devices
There are two complementary ways of studying semiconductor devices:
(i) By the numerical simulation of the semiconductor equations.
(ii) By the analytical solution of the semiconductor equations.
- There is a range of techniques which is used for device simulation with some of them beginning from the drift diffusion formalism outlined before, while others take a fundamental approach beginning from Boltzmann transport equation instead.
- Generally the numerical approach provides highly accurate results but requires heavy computational effort as well.
The output of device simulation in the form of numerical values for all the internal variables needs relatively larger effort to understand and extract important relationships between the device characteristics.
The electrons in valence band are not capable of gaining energy from the external electric field and thus do not contribute to current. This band is never empty but can be partially or completely with electrons. On contrary in the conduction band, electrons are very rarely present. But it is possible for the electrons to gain energy from the external field and so electrons in these bands contribute to electric current. Forbidden energy gap is devoid of any electrons and this energy is required by the electrons to jump from valence band to conduction band.
Or we can say that, in case of conductors and semiconductors, as we increase the temperature, the valence electrons in valence energy move from the valence band to conductance band. As the electron jumps from valence band to the conductance band, in the valence band there is a left out deficiency of electron which is called as Hole (positively charged).
Depending on the value of Egap, that is energy gap solids can be classified as metals , insulators and semi conductors.
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